Infineon IPP120N20NFD

Infineon · FETs & Power MOSFETs · MPN IPP120N20NFD

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Specifications

Gate Charge(Qg)87nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.65nF

Technical details

N-Channel 200V 84A 300W Through Hole TO-220-3

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