Infineon · FETs & Power MOSFETs · MPN IPP120N10S4-03
No reviews yet — be the first to review Infineon IPP120N10S4-03.
| Gate Charge(Qg) | 140nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 3.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.12nF |
100V 120A 3.5V 250W 3.9mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS