Infineon IPP120N08S4-04

Infineon · FETs & Power MOSFETs · MPN IPP120N08S4-04

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Specifications

Output Capacitance(Coss)1.87nF
Pd - Power Dissipation179W
Configuration-
Gate Charge(Qg)70nC
Drain to Source Voltage80V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.85nF

Technical details

179W 80V 3V 3.8mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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