Infineon IPP120N08S4-03

Infineon · FETs & Power MOSFETs · MPN IPP120N08S4-03

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)354pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.55nF

Technical details

N-Channel 80V 120A 278W Through Hole TO-220-3

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