Infineon IPP111N15N3GXKSA1

Infineon · FETs & Power MOSFETs · MPN IPP111N15N3GXKSA1

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Specifications

Drain to Source Voltage150V
Current - Continuous Drain(Id)83A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
RDS(on)11.1mΩ@10V
Number1 N-channel

Technical details

150V 83A 4V 214W 11.1mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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