Infineon IPP100N10S3-05

Infineon · FETs & Power MOSFETs · MPN IPP100N10S3-05

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

100V 100A 4V 300W 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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