Infineon IPP100N08S2-07

Infineon · FETs & Power MOSFETs · MPN IPP100N08S2-07

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Specifications

Drain to Source Voltage75V
Current - Continuous Drain(Id)100A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)7.1mΩ@10V
Number1 N-channel

Technical details

75V 100A 4V 300W 7.1mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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