Infineon · FETs & Power MOSFETs · MPN IPP084N06L3GXK
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 29nC@4.5V |
| Output Capacitance(Coss) | 920pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
| Type | N-Channel |
60V 50A 2.2V 79W 8.4mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS