Infineon IPP084N06L3 G

Infineon · FETs & Power MOSFETs · MPN IPP084N06L3 G

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)8.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.9nF

Technical details

N-Channel 60V 50A 79W Through Hole TO-220-3

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