Infineon IPP082N10NF2S

Infineon · FETs & Power MOSFETs · MPN IPP082N10NF2S

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Specifications

Gate Charge(Qg)28nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)77A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)8.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 100V 77A 100W Through Hole TO-220-3

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