Infineon · FETs & Power MOSFETs · MPN IPP076N12N3 G
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| Gate Charge(Qg) | 101nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 841pF |
| RDS(on) | 7.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.64nF |
120V 100A 3V 188W 7.6mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS