Infineon IPP070N08N3GXKSA1

Infineon · FETs & Power MOSFETs · MPN IPP070N08N3GXKSA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)1.04nF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation136W
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.84nF
TypeN-Channel

Technical details

80V 80A 3.5V 136W 7mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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