Infineon · FETs & Power MOSFETs · MPN IPP062NE7N3 G
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.84nF |
N-Channel 75V 80A 136W Through Hole TO-220-3