Infineon IPP060N06NAKSA1

Infineon · FETs & Power MOSFETs · MPN IPP060N06NAKSA1

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)613pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

60V 45A 3.3V 83W 6mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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