Infineon IPP055N08NF2S

Infineon · FETs & Power MOSFETs · MPN IPP055N08NF2S

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Specifications

Configuration-
Gate Charge(Qg)36nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)420pF
Current - Continuous Drain(Id)99A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF

Technical details

N-Channel 80V 99A 3.8W Through Hole TO-220-3

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