Infineon IPP048N04N G

Infineon · FETs & Power MOSFETs · MPN IPP048N04N G

No reviews yet — be the first to review Infineon IPP048N04N G.

Specifications

Gate Charge(Qg)31nC
Drain to Source Voltage40V
Output Capacitance(Coss)740pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 40V 70A 79W Through Hole TO-220-3

Related FETs & Power MOSFETs