Infineon · FETs & Power MOSFETs · MPN IPP041N12N3G
No reviews yet — be the first to review Infineon IPP041N12N3G.
| Gate Charge(Qg) | 158nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 1.32nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.4nF |
| Type | N-Channel |
N-Channel 120V 120A 300W Through Hole TO-220-3