Infineon IPP040N08NF2S

Infineon · FETs & Power MOSFETs · MPN IPP040N08NF2S

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)115A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.8nF
TypeN-Channel

Technical details

N-Channel 80V 115A 3.8W Through Hole TO-220-3

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