Infineon IPP040N06N

Infineon · FETs & Power MOSFETs · MPN IPP040N06N

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)838pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.375nF
TypeN-Channel

Technical details

N-Channel 60V 80A 107W Through Hole TO-220-3

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