Infineon IPP039N04L G

Infineon · FETs & Power MOSFETs · MPN IPP039N04L G

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Specifications

Gate Charge(Qg)59nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.1nF

Technical details

N-Channel 40V 80A 94W Through Hole TO-220-3

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