Infineon · FETs & Power MOSFETs · MPN IPP037N08N3 G
No reviews yet — be the first to review Infineon IPP037N08N3 G.
| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.64nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 3.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
| Type | N-Channel |
N-Channel 80V 100A 214W Through Hole TO-220-3