Infineon IPP033N04NF2S

Infineon · FETs & Power MOSFETs · MPN IPP033N04NF2S

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)113A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)69pF
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF

Technical details

N-Channel 40V 113A 3.8W Through Hole TO-220-3

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