Infineon IPP030N10N5

Infineon · FETs & Power MOSFETs · MPN IPP030N10N5

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Specifications

Gate Charge(Qg)139nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.3nF

Technical details

100V 120A 3.8V 250W 3mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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