Infineon · FETs & Power MOSFETs · MPN IPP028N08N3 G
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| Gate Charge(Qg) | 206nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.2nF |
80V 100A 2.8V 300W 2.8mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS