Infineon · FETs & Power MOSFETs · MPN IPP027N08N5
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| Gate Charge(Qg) | 123nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.97nF |
80V 120A 3.8V 214W 2.7mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS