Infineon IPP026N04NF2S

Infineon · FETs & Power MOSFETs · MPN IPP026N04NF2S

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)121A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)98pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.8nF

Technical details

40V 121A 3.8W Through Hole TO-220-3

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