Infineon · FETs & Power MOSFETs · MPN IPP023NE7N3 G
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| Output Capacitance(Coss) | 2.42nF |
|---|---|
| Pd - Power Dissipation | 300W |
| Configuration | - |
| Gate Charge(Qg) | 155nC |
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 2.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.8nF |
300W 75V 3.1V 2.1mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS