Infineon IPP023N08N5AKSA1

Infineon · FETs & Power MOSFETs · MPN IPP023N08N5AKSA1

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Specifications

Gate Charge(Qg)166nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.95nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)114pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.1nF
TypeN-Channel

Technical details

N-Channel 80V 120A 300W Through Hole TO-220-3

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