Infineon IPP020N08N5

Infineon · FETs & Power MOSFETs · MPN IPP020N08N5

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Specifications

Gate Charge(Qg)178nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)16.9nF

Technical details

80V 120A 3.8V 375W 2mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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