Infineon · FETs & Power MOSFETs · MPN IPP019N08NF2SAKMA1
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| Gate Charge(Qg) | 124nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 191A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.7nF |
80V 191A 3.8V 3.8W 1.9mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS