Infineon IPP016N08NF2SAKMA1

Infineon · FETs & Power MOSFETs · MPN IPP016N08NF2SAKMA1

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)196A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)1.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12nF

Technical details

N-Channel 80V 196A 3.8W Through Hole TO-220-3

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