Infineon IPP015N04N G

Infineon · FETs & Power MOSFETs · MPN IPP015N04N G

No reviews yet — be the first to review Infineon IPP015N04N G.

Specifications

Gate Charge(Qg)250nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)5.3nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)20nF

Technical details

N-Channel 40V 120A 250W Through Hole TO-220

Related FETs & Power MOSFETs