Infineon IPP011N04NF2S

Infineon · FETs & Power MOSFETs · MPN IPP011N04NF2S

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)210nC@10V
Current - Continuous Drain(Id)201A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation3.8W
Reverse Transfer Capacitance (Crss@Vds)272pF
RDS(on)1.15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15nF

Technical details

40V 201A 3.4V 3.8W 1.15mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS

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