Infineon IPN95R3K7P7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPN95R3K7P7ATMA1

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage950V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)3.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)196pF

Technical details

N-Channel 950V 2A 6W Surface Mount SOT-223

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