Infineon IPN95R1K2P7

Infineon · FETs & Power MOSFETs · MPN IPN95R1K2P7

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage950V
Output Capacitance(Coss)7pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation7W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)478pF

Technical details

N-Channel 950V 6A 7W Surface Mount SOT-223

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