Infineon · FETs & Power MOSFETs · MPN IPN80R600P7ATMA1
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 7.4W |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 570pF |
N-Channel 800V 8A 7.4W Surface Mount SOT-223