Infineon IPN80R4K5P7ATMA1

Infineon · FETs & Power MOSFETs · MPN IPN80R4K5P7ATMA1

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Specifications

Gate Charge(Qg)4nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)3pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)80pF

Technical details

N-Channel 800V 1.5A 6W Surface Mount SOT-223

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