Infineon · FETs & Power MOSFETs · MPN IPN80R2K4P7ATMA1
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| Gate Charge(Qg) | 7.5nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 2.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 6.3W |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
N-Channel 800V 2.5A 6.3W Surface Mount SOT-223