Infineon IPN70R900P7S

Infineon · FETs & Power MOSFETs · MPN IPN70R900P7S

No reviews yet — be the first to review Infineon IPN70R900P7S.

Specifications

Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)5pF
Current - Continuous Drain(Id)6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)211pF
Type-

Technical details

700V 6.5W Surface Mount SOT-223

Related FETs & Power MOSFETs