Infineon IPN70R750P7SATMA1

Infineon · FETs & Power MOSFETs · MPN IPN70R750P7SATMA1

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Specifications

Gate Charge(Qg)8.3nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)5.1pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6.7W
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)306pF

Technical details

N-Channel 700V 6.5A 6.7W Surface Mount SOT-223

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