Infineon IPN70R2K1CE

Infineon · FETs & Power MOSFETs · MPN IPN70R2K1CE

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Specifications

Gate Charge(Qg)7.8nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)2.6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)2.1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)163pF

Technical details

2.6A 3.5V 5W 2.1Ω@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS

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