Infineon IPN70R2K0P7S

Infineon · FETs & Power MOSFETs · MPN IPN70R2K0P7S

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Specifications

Configuration-
Gate Charge(Qg)3.8nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)2A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.64Ω@10V
Number1 N-channel
Input Capacitance(Ciss)130pF

Technical details

N-Channel 700V 2A 6W Surface Mount SOT-223

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