Infineon IPN70R1K5CE

Infineon · FETs & Power MOSFETs · MPN IPN70R1K5CE

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Specifications

Gate Charge(Qg)10.5nC@10V
Drain to Source Voltage700V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5.4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)225pF
Type-

Technical details

N-Channel 700V 5.4A 5W Surface Mount SOT-223

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