Infineon IPN70R1K2P7S

Infineon · FETs & Power MOSFETs · MPN IPN70R1K2P7S

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Specifications

Gate Charge(Qg)4.8nC@10V
Drain to Source Voltage700V
Current - Continuous Drain(Id)3A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation6.3W
Reverse Transfer Capacitance (Crss@Vds)132pF
RDS(on)1.2Ω
Number1 N-channel
Input Capacitance(Ciss)174pF

Technical details

700V 3A 6.3W Surface Mount SOT-223

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