Infineon · FETs & Power MOSFETs · MPN IPN60R600PFD7S
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| Gate Charge(Qg) | 8.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 344pF |
650V 4A 7W Surface Mount SOT-223