Infineon IPN60R600P7S

Infineon · FETs & Power MOSFETs · MPN IPN60R600P7S

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Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation7W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)363pF
Type-

Technical details

N-Channel 600V 6A 7W Surface Mount SOT-223

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