Infineon IPN60R360P7S

Infineon · FETs & Power MOSFETs · MPN IPN60R360P7S

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)9A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation7W
RDS(on)360mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)555pF

Technical details

600V 9A 4V 7W 360mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS

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