Infineon · FETs & Power MOSFETs · MPN IPN60R2K1CE
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| Gate Charge(Qg) | 6.7nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 2.4A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 2.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 140pF |
N-Channel 650V 2.4A 5W Surface Mount SOT-223