Infineon · FETs & Power MOSFETs · MPN IPN60R2K0PFD7S
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| Gate Charge(Qg) | 3.8nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 6W |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| RDS(on) | 2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 134pF |
650V 1.9A 4V 6W 2Ω@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS