Infineon IPN60R1K5PFD7SATMA1

Infineon · FETs & Power MOSFETs · MPN IPN60R1K5PFD7SATMA1

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Specifications

Gate Charge(Qg)4.6nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)4pF
Current - Continuous Drain(Id)3.6A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)1.23Ω@10V
Number1 N-channel
Input Capacitance(Ciss)169pF

Technical details

N-Channel 600V 3.6A 6W Surface Mount SOT-223

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